An increasing interest in the behaviour of silicon detectors at cryogenic t
emperatures has been awakened by the discovery of the so-called Lazarus eff
ect, namely the recovery of charge collection efficiency (CCE) by means of
cryogenic cooling. We measured the CCEs of three single diodes previously i
rradiated with different neutron fluences. The current-voltage characterist
ic were measured at 300 and 77 K, showing that the low-temperature operatio
n considerably decreases the steady-state current. This is also the case wh
en a forward voltage bias is applied, which then becomes a suitable option.
At 77 K, in the case of samples irradiated with 5 x 10(14) neutrons cm(-2)
, the CCE is completely recovered. A third sample irradiated with 2 x 10(15
) neutrons cm(-2) shows a 60% CCE at 250 V forward bias.