Phase slippage at the interface: normal metal/sliding charge-density wave

Citation
D. Rideau et al., Phase slippage at the interface: normal metal/sliding charge-density wave, PHYSICA B, 280(1-4), 2000, pp. 317-322
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
280
Issue
1-4
Year of publication
2000
Pages
317 - 322
Database
ISI
SICI code
0921-4526(200005)280:1-4<317:PSATIN>2.0.ZU;2-0
Abstract
Phase slippage is required at the current electrodes of quasi-one-dimension al conductors with a charge density wave (CDW) ground state for the convers ion from free to condensed carriers. We have performed at the ESRF high-res olution X-ray measurements of the spatially varying shift q(x) of the CDW s atellite wave vector between current contacts on a thin NbSe3 whisker in th e sliding state. Applying direct currents, we observe at 90 K a steep expon ential decrease of the shift within a few hundred microns from the contact. The CDW strain profile q(x) reflects the carrier conversion process, via n ucleation and growth of phase-dislocation loops. Pulsed current measurement s of the shift q show important differences between pulsed and de current d ata, revealing a spatially dependent relaxational behaviour of the CDW stra in. Using time-resolved high spatial resolution X-ray we observe at 300 mu m from the electrode a stretched exponential-type decay of the shift q(t) u pon switching off the current (T = 75 K): q(t) = q(0)[exp( - t/tau)(mu)] wi th tau = 23 ms and mu = 0.36. (C) 2000 Elsevier Science B.V. All rights res erved.