The effect of oxygen presence in sputtering chamber on magnetization of thin FeCo films

Authors
Pusenkov, VM Moskalev, K Pleshanov, N Schebetov, A Syromyatnikov, V Ul'yanov, V Kobzev, A Nikonov, O
Citation
Vm. Pusenkov et al., The effect of oxygen presence in sputtering chamber on magnetization of thin FeCo films, PHYSICA B, 276, 2000, pp. 654-655
Citations number
2
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
276
Year of publication
2000
Pages
654 - 655
Database
ISI
SICI code
0921-4526(200003)276:<654:TEOOPI>2.0.ZU;2-M
Abstract
The effect of oxygen presence in sputtering chamber on magnetization of thi n ( similar to 700-800 Angstrom) FeCo films was studied by polarized neutro n reflectometry. The samples were prepared by magnetron sputtering of the F e36Co64 alloy onto glass substrates in the presence of oxygen in the sputte ring chamber. For a given oxygen content in the sputtering chamber the oxyg en concentration in the Blm decreased with the sputtering rate. The increas e in oxygen inside the film was found to decrease its magnetic saturation i nduction. The exact element depth profiles of the prepared samples was made by Rutherford back scattering (RBS) technique. (C) 2000 Elsevier Science B .V. AII rights reserved.