The importance of disorder in very high quality semiconductor microcavities

Citation
M. Saba et al., The importance of disorder in very high quality semiconductor microcavities, PHYS ST S-A, 178(1), 2000, pp. 149-153
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
178
Issue
1
Year of publication
2000
Pages
149 - 153
Database
ISI
SICI code
0031-8965(200003)178:1<149:TIODIV>2.0.ZU;2-F
Abstract
We investigate a semiconductor microcavity containing a quantum well, a sam ple of exceptional quality. We observe a four-wave mixing response which re sembles that of an inhomogeneously broadened exciton system, while the line ar transmission measurements are affected by the homogeneous part of the br oadening and have a completely different decay time. We show that the four- wave mixing response cannot be calculated using the excitonic parameters (l inewidth and relaxation time) extracted from the linear transmission measur ements, as the coupling of exciton and photon states deeply modifies the sc attering channels.