We present a novel approach to the investigation of vertical disorder in qu
antum wells (QW) based on the reflectivity lineshape analysis of anti-Bragg
structures, where the condition of destructive interference makes the refl
ectivity spectrum extremely sensitive to vertical disorder. We exploit the
method in the case of GaAs/AlGaAs structures and we demonstrate the possibi
lity of measuring very small differences in the excitonic transitions.