M. De Giorgi et al., Excitonic and free carrier recombination in InxGa1-xAs/GaAs V-shaped quantum wire for different in content, PHYS ST S-A, 178(1), 2000, pp. 243-248
We have investigated the optical properties of InxGa1-xAs/GaAs V-shaped qua
ntum wires (0.1 < x < 0.2) by time integrated and magneto-photoluminescence
experiments as a function of excitation power density and applied magnetic
field at different temperatures. Tne experimental results indicate the dif
ferent nature of the radiative recombination processes depending on the In
concentration: in the deep quantum wires (x greater than or equal to 0.15)
the recombination is excitonic, whereas free carriers seem to dominate in t
he shallow wires (x = 0.10). We demonstrate that the actual recombination m
echanism is primarily effected by the competition between confinement and b
uilt-in piezoelectric field which governs the exciton binding energy. Speci
fic theoretical models have been developed to interpret the experimental da
ta.