Effects of confinement potential asymmetries on the fine structure of excitons in self-assembled In0.60Ga0.40As quantum dots

Authors
Bayer, M Kuther, A Forchel, A Reinecke, TL
Citation
M. Bayer et al., Effects of confinement potential asymmetries on the fine structure of excitons in self-assembled In0.60Ga0.40As quantum dots, PHYS ST S-A, 178(1), 2000, pp. 297-301
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
178
Issue
1
Year of publication
2000
Pages
297 - 301
Database
ISI
SICI code
0031-8965(200003)178:1<297:EOCPAO>2.0.ZU;2-3
Abstract
The excitonic fine structure of self-assembled In0.60Ga0.40As quantum dots has been studied by magneto-photoluminescence spectroscopy. Two types of do ts which differ e.g. in the magnetic field dependence of the exciton spin s plitting (at low B linear versus quadratic dependence) are found. These dif ferences can be traced to variations of the dot shape, which for one type h as axial symmetry around the growth direction, while for the other type the dots are laterally distorted.