Dynamical band gap renormalization in self-organized InAs/GaAs quantum dots

Authors
Yuan, ZL Foo, ERAD Ryan, JF Mowbray, DJ Skolnick, MS Hopkinson, M
Citation
Zl. Yuan et al., Dynamical band gap renormalization in self-organized InAs/GaAs quantum dots, PHYS ST S-A, 178(1), 2000, pp. 345-348
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
178
Issue
1
Year of publication
2000
Pages
345 - 348
Database
ISI
SICI code
0031-8965(200003)178:1<345:DBGRIS>2.0.ZU;2-T
Abstract
Dynamical hand gap renormalization has been observed in InAs/GaAs self-orga nized quantum dots using femtosecond time-resolved photoluminescence up-con version. The energy shift correlates well with the time-dependent dot occup ancy, and is independent of the carrier population in the wetting layer or GaAs barriers. These results indicate that the band gap renormalization is due mainly to the Coulomb exchange-correlation interactions among the confi ned carriers inside the dots.