Focused ion beam lithography and subsequent thermal annealing is used to pr
epare buried CdTe/ Cd(Mg,Mn)Te single dots. A well defined lateral potentia
l with a depth of more than 220 meV is achieved, thus exceeding the thermal
energy kT at room temperature significantly. The high quantum efficiency o
f the dots allows the investigation of single excitons as well as multiexci
tons in the same single quantum dot.