Radiative lifetime of negative trions in GaAs and CdTe quantum wells

Citation
V. Ciulin et al., Radiative lifetime of negative trions in GaAs and CdTe quantum wells, PHYS ST S-A, 178(1), 2000, pp. 495-499
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
178
Issue
1
Year of publication
2000
Pages
495 - 499
Database
ISI
SICI code
0031-8965(200003)178:1<495:RLONTI>2.0.ZU;2-T
Abstract
We have studied experimentally the radiative lifetimes of negatively charge d excitons (X-) and neutral excitons (X) in GaAs and CdTe quantum wells. De spite the different optical properties (e.g. trion binding energies) and th e different quantum well structures of the studied samples, we find quite s imilar X- lifetimes in the range of 45 to 60 ps. On the other side, the X l ifetimes are very different and influenced by the material. For relatively low electron concentrations, the X- lifetime is found to be constant with i ncreasing temperature in a given range. This time behaviour of X- suggests that X- is localised for low electron concentrations in the CdTe QW.