Crossover from hopping to diffusive transport with increasing gate voltagein poly-Si MOS inversion layer

Authors
Ishida, S Oto, K Takaoka, S Murase, K Serikawa, T
Citation
S. Ishida et al., Crossover from hopping to diffusive transport with increasing gate voltagein poly-Si MOS inversion layer, PHYS ST S-B, 218(1), 2000, pp. 89-92
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
218
Issue
1
Year of publication
2000
Pages
89 - 92
Database
ISI
SICI code
0370-1972(200003)218:1<89:CFHTDT>2.0.ZU;2-4
Abstract
Variation in the temperature dependence of the resistance and magnetic-fiel d dependence of negative magnetoresistance (MR) with increasing gate voltag e has been studied on an n-channel poly-Si MOS inversion layer. We find a c rossover from strongly-localized (hopping) to weakly-localized (diffusive) regime in two dimensions around the sheet resistance of approximate to 6 k Omega with increasing gate voltage. In both regimes, the negative MR due to orbital motion is observed and explained by the quantum interference effec ts.