Hopping magnetoresistance in a single 2D layer in parallel magnetic fields

Authors
Khondaker, SI Pepper, M Ritchie, DA Shlimak, I
Citation
Si. Khondaker et al., Hopping magnetoresistance in a single 2D layer in parallel magnetic fields, PHYS ST S-B, 218(1), 2000, pp. 181-183
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
218
Issue
1
Year of publication
2000
Pages
181 - 183
Database
ISI
SICI code
0370-1972(200003)218:1<181:HMIAS2>2.0.ZU;2-A
Abstract
Large positive magnetoresistance has been observed in parallel magnetic fie lds in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. This implies that spins play an important role in 2D VRH conductivity. A possible explanatio n involves hopping via double occupied states in the upper Hubbard band, wh ere the intra-state correlation of spins is important.