Hd. Chopra et al., Nature of coupling and origin of coercivity in giant magnetoresistance NiO-Co-Cu-based spin valves, PHYS REV B, 61(14), 2000, pp. 9642-9652
The effect of various couplings on the switching field and coercivity in Ni
O-Co-Cu-based giant magnetoresistance (GMR) bottom spin valves is investiga
ted. Bottom spin valves as well as different layer permutations that make u
p a bottom spin valve, viz., Co single films, Co/Cu/Co trilayers, and Co/Ni
O bilayers (deposited under similar growth conditions), were investigated f
or their magnetic, crystal, and interfacial structure. As-deposited bottom
spin valves exhibit a large GMR of approximate to 16.5%, and a small net fe
rromagnetic coupling (+0.36 mT) between the "free" Co layer and the NiO-pin
ned Co layer. The high resolution transmission electron microscopy (HRTEM)
and in situ scanning tunneling microscopy (STM) studies on spin valves and
trilayers show that the average grain size in these films is approximate to
20 nm and average roughness approximate to 0.3 nm. Using these values, the
Observed ferromagnetic coupling in spin valves could largely be accounted
for by Neel's so-called "orange-peel" coupling. Results also show that the
"free" Co layer exhibits an enhanced, coercivity (H-c(Free-Co) = 6.7 mT) wi
th respect to Co single films of comparable thickness (H-c(Co) = 2.7 mT). T
he TEM studies did not reveal the presence of any pin-holes, and "orange-pe
el" or oscillatory exchange coupling mechanisms cannot adequately account f
or this observed coercivity enhancement in the "free" Co layer of spin valv
es. The present study shows that the often observed and undesirable coerciv
ity enhancement in the "free" Co layer results from magnetostatic coupling
between domain walls in the "free" Co layer and high coercivity NiO-pinned
Co layer (H-c(Pinned-Co) approximate to 45 mT); without NiO, the coercivity
of Co layers in the corresponding Co/Cu/Co trilayer remains largely unchan
ged (H-c(Co/Cu/Co) = 3.0 mT) with respect to Co single films, Evidence of:
magnetostatically coupled domain walls was confirmed by direct observation
of magnetization reversal, which revealed that domain walls in the "free" C
o layer are magnetostatically locked-in with stray fields due to domain wal
ls or magnetization ripples in the high coercivity NiO-pinned Co layer of t
he spin valves. The observed escape fields (defined as fields in excess of
intrinsic coercivity of Co single him that are required to overcome magneto
static coupling between domain walls) are in agreement with theoretically c
alculated values of escape fields.