Two-phase behavior in strained thin films of hole-doped manganites

Citation
A. Biswas et al., Two-phase behavior in strained thin films of hole-doped manganites, PHYS REV B, 61(14), 2000, pp. 9665-9668
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
14
Year of publication
2000
Pages
9665 - 9668
Database
ISI
SICI code
1098-0121(20000401)61:14<9665:TBISTF>2.0.ZU;2-B
Abstract
We present a study of the effect of biaxial strain on the electrical and ma gnetic properties of thin films of manganites. We observe that manganite fi lms grown under biaxial compressive strain exhibit island growth morphology which leads to a nonuniform distribution of the strain. Transport and magn etic properties of these films suggest the coexistence of two different pha ses, a metallic ferromagnet and an insulating antiferromagnet. We suggest t hat the high strain regions are insulating while the low strain regions are metallic. In such nonuniformly strained samples, we observe a large magnet oresistance and a field-induced insulator-to-metal transition.