The nonlinear theory of generation in a resonant tunneling diode is develop
ed for a frequency range of omega < Gamma, where Gamma is the width of the
resonant level. This frequency interval is usually implemented in experimen
ts. The generation power of a resonant tunneling diode is calculated analyt
ically as a function of the pumping current and the diode parameters. It is
demonstrated that there exists no limitation on the generation power. The
soft and hard generation regimes as well as hysteresis phenomena are predic
ted.