Metal-organic chemical vapour deposition of lead scandium tantalate: chemical issues and precursor selection

Authors
Jones, AC Leedham, TJ Davies, HO Fleeting, KA O'Brien, P Crosbie, MJ Wright, PJ Williams, DJ Lane, PA
Citation
Ac. Jones et al., Metal-organic chemical vapour deposition of lead scandium tantalate: chemical issues and precursor selection, POLYHEDRON, 19(3), 2000, pp. 351-355
Citations number
24
Categorie Soggetti
Inorganic & Nuclear Chemistry
Journal title
POLYHEDRON
ISSN journal
02775387 → ACNP
Volume
19
Issue
3
Year of publication
2000
Pages
351 - 355
Database
ISI
SICI code
0277-5387(20000215)19:3<351:MCVDOL>2.0.ZU;2-5
Abstract
MOCVD is a promising technique for the deposition of the pyroelectric oxide lead scandium tantalate, Pb(Sc0.5Ta0.5)O-3. In order to exploit the full p otential of the method, it is important to identify the optimum combination of precursors so that process parameters and film properties are optimised . In this paper, issues involved in the selection of suitable Pb, Sc and Ta precursors are discussed and the molecular design of new Ta and Sc sources is described. It is shown how the use of carefully matched precursors allo ws the growth of Pb(Sc0.5Ta0.5)O-3 in the required perovskite phase at low substrate temperatures. (C) 2000 Elsevier Science Ltd All rights reserved.