Optical and electrical investigations of isoelectronic In-doped GaN films

Authors
Shu, CK Lee, WH Pan, YC Chen, CC Lin, HC Ou, J Chen, WH Chen, WK Lee, MC
Citation
Ck. Shu et al., Optical and electrical investigations of isoelectronic In-doped GaN films, SOL ST COMM, 114(5), 2000, pp. 291-293
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
114
Issue
5
Year of publication
2000
Pages
291 - 293
Database
ISI
SICI code
0038-1098(2000)114:5<291:OAEIOI>2.0.ZU;2-Q
Abstract
The optical and electrical properties of isoelectronic In-doped GaN films g rown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray , photoluminescence (PL), Hall and Raman measurements. As a result, adequat e In-doping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decre ase in the widths. The improved crystalline and optical qualities of GaN fi lms may be attributed to the decrease in defects. (C) 2000 Elsevier Science Ltd. All rights reserved.