Two- and three-dimensional numerical modeling of copper electroplating foradvanced ULSI metallization

Citation
G. Ritter et al., Two- and three-dimensional numerical modeling of copper electroplating foradvanced ULSI metallization, SOL ST ELEC, 44(5), 2000, pp. 797-807
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
5
Year of publication
2000
Pages
797 - 807
Database
ISI
SICI code
0038-1101(200005)44:5<797:TATNMO>2.0.ZU;2-#
Abstract
In this paper various electrochemical copper deposition (ECD) methods will be reviewed and the advantages of electrochemical deposition demonstrated. In order to understand the electrochemical deposition process and to improv e the uniformity of copper layers deposited on large Si wafers, modeling of ECD is necessary. Important components of a numerical model and the benefi ts of simplified simulations are discussed. Several two- and three-dimensio nal simulations are presented illustrating some of the challenges in growin g uniform copper films. In addition to macro-scale modeling, micro-scale pr edictions of the copper filling characteristics of circuit features on a wa fer (i.e., high-aspect ratio trenches) are another important modeling appli cation. Selected micro-scale modeling results from the literature will be r eviewed. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.