Influence of melt convection on the interface during Czochralski crystal growth

During the growth process of single bulk crystals from melt, the defect den sity is strongly affected by the shape of the melt/crystal interface. The s hape of the interface is governed by the construction of the growth equipme nt including the heating system and the convection in the melt. In this pap er the flow in a GaAs melt and the boron oxide encapsulant in an equipment used for vapour pressure controlled Czochralski growth has been calculated. 2D-axisymmetric calculations have been performed by using the commercial g eneral purpose program FIDAP(TM). A simple model has been developed to desc ribe the phase change problem in the weak form. (C) 2000 Elsevier Science L td. All rights reserved.