A spectro-microscopic approach for spatially resolved characterisation of semiconductor structures in PEEM

To gain spatially resolved spectroscopic information a photo-emission elect ron microscope (PEEM) equipped with an energy analyser (mu ESCA) is used in combination with synchrotron radiation. With this equipment it is possible to obtain near edge absorption as well as photoelectron spectra. We demons trate the ability of the PEEM/mu ESCA to measure high resolution photoelect ron spectra. We have used this technique to investigate grains and grain bo undaries on multicrystalline silicon without removing the native oxide. The various precipitations seen in the PEEM were investigated using mu NEXAFS together with mu PES. A model is proposed that is able to describe the phot oemission process from silicon together with its native oxide using Hg-lamp illumination (hv(max) = 4.9 eV). This novel model and the approach of inve stigating local inhomogeneities are designed to study the lateral doping di stribution of industrial silicon devices as well as to observe the dopant d iffusion under realistic conditions. We expect that the availability of hig hly brilliant light sources such as the new undulator beamline at BESSY-II will be highly beneficial for such investigations. (C) 2000 Elsevier Scienc e Ltd. All rights reserved.