PHOTOCHEMICAL ETCHING TECHNIQUE FOR PREPARING HIGH-QUALITY TEM SAMPLES OF N-TYPE COMPOUND SEMICONDUCTORS

Authors
TANAKA S FUJII H HIBINO M
Citation
S. Tanaka et al., PHOTOCHEMICAL ETCHING TECHNIQUE FOR PREPARING HIGH-QUALITY TEM SAMPLES OF N-TYPE COMPOUND SEMICONDUCTORS, Journal of Electron Microscopy, 46(2), 1997, pp. 129-133
Citations number
4
Categorie Soggetti
Microscopy
Journal title
Journal of Electron Microscopy → ACNP
ISSN journal
00220744
Volume
46
Issue
2
Year of publication
1997
Pages
129 - 133
Database
ISI
SICI code
0022-0744(1997)46:2<129:PETFPH>2.0.ZU;2-J
Abstract
Photochemical etching as a method to prepare samples is described for transmission electron microscopy (TEM) of n-type compound semi-conduct ors. It is shown that high-quality, damage-free TEM samples, suitable for high-resolution imaging can be prepared by proper selection of the laser beam spot size and the electrolyte. TEM sample preparation was demonstrated using (001) GaAs and InGaAsP/(001)InP as plan-view and cr oss-sectional samples, respectively.