Design and measurement of GaAs/AlGaAs quantum well structure

Authors
Li, N Yuan, XZ Li, N Lu, W Li, ZF Dou, HF Shen, XC Jin, L Li, HW Zhou, JM Huang, Y
Citation
N. Li et al., Design and measurement of GaAs/AlGaAs quantum well structure, ACT PHY C E, 49(4), 2000, pp. 797-801
Citations number
6
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290 → ACNP
Volume
49
Issue
4
Year of publication
2000
Pages
797 - 801
Database
ISI
SICI code
1000-3290(200004)49:4<797:DAMOGQ>2.0.ZU;2-B
Abstract
In this paper, we describe the energy levels of GaAs/AlGaAs quantum well st ructure used in quantum well Infrared photodetector (QWIP). The photorespon se and photoluminescent spectrum of quantum well material were measured. Th e experiment and simulation show that the width of the well and the Al mola r ratio of QWIP should be 4.7nm and 0.29, separately, if the peak wavelengt h of QWIP is expected to be at 8 mu m.