Characterization of phase transformations in PZT thin films prepared by a modified sol-gel technique

A novel method for preparing PbZr0.5Ti0.5O3(PZT50/50) thin films with diffe rent thicknesses of single-annealed layer has been applied in a modified so l-gel process. The effect of the thickness of single-annealed layer on the structure and electric properties was studied. It is observed that the degr ee of (111) orientation for the PZT films increases with the reduction of s ingle-annealed layer thickness. As the thickness of single-annealed layer d rops to 40 nm, the film shows a high degree of (111) orientation. The decre ase of single-annealed layer thickness also leads to the increase of the re manent polarization and dielectric constant. The formation of (111) preferr ed orientation in PZT50/50 films is considered to be the result of the hete rogeneous nucleation mechanism.