Anisotropic incoherent reflection model for spectroscopic ellipsometry of a thick semitransparent anisotropic substrate

Citation
R. Ossikovski et al., Anisotropic incoherent reflection model for spectroscopic ellipsometry of a thick semitransparent anisotropic substrate, APPL OPTICS, 39(13), 2000, pp. 2071-2077
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
APPLIED OPTICS
ISSN journal
00036935 → ACNP
Volume
39
Issue
13
Year of publication
2000
Pages
2071 - 2077
Database
ISI
SICI code
0003-6935(20000501)39:13<2071:AIRMFS>2.0.ZU;2-E
Abstract
An anisotropic incoherent reflection model for the Mueller matrix elements of an optically thick uniaxial anisotropic semitransparent substrate with i ts anisotropy axis along its surface normal is developed. The Mueller matri x elements are measured by phase-modulated spectroscopic ellipsometry (SE) and compared with incoherent reflection model simulations. In the case of a sapphire substrate the oscillations observed are accurately modeled, and, in addition, the oscillating degree of polarization is correctly predicted. A straightforward generalization of the optical model, in the case of an a rbitrary stack of layers containing a thick anisotropic semitransparent sub strate, is also proposed and experimentally validated. The model is further applied to study the anisotropic dielectric function of a semi-insulating 4H-SiC wafer. An approximation based on a simple variation in the optical t ransition element is proposed to model the SiC birefringence. In conclusion , SE is shown to be a powerful alternative for investigating and predicting the behavior of optically thick birefringent materials. (C) 2000 Optical S ociety of America.