R. Ossikovski et al., Anisotropic incoherent reflection model for spectroscopic ellipsometry of a thick semitransparent anisotropic substrate, APPL OPTICS, 39(13), 2000, pp. 2071-2077
An anisotropic incoherent reflection model for the Mueller matrix elements
of an optically thick uniaxial anisotropic semitransparent substrate with i
ts anisotropy axis along its surface normal is developed. The Mueller matri
x elements are measured by phase-modulated spectroscopic ellipsometry (SE)
and compared with incoherent reflection model simulations. In the case of a
sapphire substrate the oscillations observed are accurately modeled, and,
in addition, the oscillating degree of polarization is correctly predicted.
A straightforward generalization of the optical model, in the case of an a
rbitrary stack of layers containing a thick anisotropic semitransparent sub
strate, is also proposed and experimentally validated. The model is further
applied to study the anisotropic dielectric function of a semi-insulating
4H-SiC wafer. An approximation based on a simple variation in the optical t
ransition element is proposed to model the SiC birefringence. In conclusion
, SE is shown to be a powerful alternative for investigating and predicting
the behavior of optically thick birefringent materials. (C) 2000 Optical S
ociety of America.