D. Hofstetter et al., Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser, APPL PHYS L, 76(17), 2000, pp. 2337-2339
We demonstrate an optically pumped complex-coupled InGaN/GaN-based multiple
-quantum-well distributed-feedback laser in the violet/blue spectral region
. The third-order grating providing feedback was defined holographically an
d dry etched through a portion of the active region by chemically assisted
ion-beam etching. Epitaxial overgrowth of the GaN waveguide completed the d
evice structure without introducing dislocations, as shown by transmission
electron microscopy. The laser emitted light at 392.7 nm with high side-mod
e suppression and a narrow linewidth of 1.5 Angstrom. In contrast to Fabry-
Perot lasers fabricated from the same piece of material, only a very minor
change in emission wavelength was observed when operating the device at hig
her pump intensities. (C) 2000 American Institute of Physics. [S0003-6951(0
0)04017-1].