Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser

We demonstrate an optically pumped complex-coupled InGaN/GaN-based multiple -quantum-well distributed-feedback laser in the violet/blue spectral region . The third-order grating providing feedback was defined holographically an d dry etched through a portion of the active region by chemically assisted ion-beam etching. Epitaxial overgrowth of the GaN waveguide completed the d evice structure without introducing dislocations, as shown by transmission electron microscopy. The laser emitted light at 392.7 nm with high side-mod e suppression and a narrow linewidth of 1.5 Angstrom. In contrast to Fabry- Perot lasers fabricated from the same piece of material, only a very minor change in emission wavelength was observed when operating the device at hig her pump intensities. (C) 2000 American Institute of Physics. [S0003-6951(0 0)04017-1].