Direct synthesis of silicon nanowires, silica nanospheres, and wire-like nanosphere agglomerates

Citation
Jl. Gole et al., Direct synthesis of silicon nanowires, silica nanospheres, and wire-like nanosphere agglomerates, APPL PHYS L, 76(17), 2000, pp. 2346-2348
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
17
Year of publication
2000
Pages
2346 - 2348
Database
ISI
SICI code
0003-6951(20000424)76:17<2346:DSOSNS>2.0.ZU;2-2
Abstract
Elevated temperature synthesis has been used to generate virtually defect f ree SiO2 sheathed crystalline silicon nanowires and silica (SiO2) nanospher es which can be agglomerated to wire-like configurations impregnated with c rystalline silicon. The SiO2 passivated (sheathed) crystalline silicon nano wires, generated with a modified approach using a heated Si-SiO2 mix, with their axes parallel to [111] are found to be virtually defect free. Modific ations to the system allow the simultaneous formation of SiO2 nanospheres ( d similar to 10-30 nm) as virtually monodisperse gram quantity powders whic h form large surface area catalysts for the selective conversion of ethanol to acetaldehyde. (C) 2000 American Institute of Physics. [S0003-6951(00)00 717-8].