Effect of GaAsyP1-y(0 <= y < 1) interlayers on the structural, optical, and electrical characteristics of GaAs/InGaP heterojunction

The effect of GaAsyP1-y(0 less than or equal to y < 1) interlayers on the c haracteristics of GaAs/InGaP heterojunction has been investigated. For samp les having GaAsyP1-y interlayers in the range of 0 < y less than or equal t o 0.75 inserted in the GaAs-on-InGaP interface, sharp GaAs band-edge emissi ons are recovered. These results are attributed to smoothly grown InGaAs(P) interfacial layers with the band-gap energy higher than that of GaAs throu gh transmission electron microscopy measurements. In addition, the amount o f carrier depletion at the GaAs-on-InGaP interface is smaller with the use of GaAsyP1-y interlayers than that for no interlayer in capacitance-voltage measurements. (C) 2000 American Institute of Physics. [S0003-6951(00)00217 -5].