Evidence of interdot electronic tunneling in vertically coupled In0.4Ga0.6As self-organized quantum dots

Citation
J. Urayama et al., Evidence of interdot electronic tunneling in vertically coupled In0.4Ga0.6As self-organized quantum dots, APPL PHYS L, 76(17), 2000, pp. 2394-2396
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
17
Year of publication
2000
Pages
2394 - 2396
Database
ISI
SICI code
0003-6951(20000424)76:17<2394:EOIETI>2.0.ZU;2-Z
Abstract
Ultrafast differential transmission spectroscopy with a resonant pump revea ls evidence of electronic tunneling among the excited levels of vertically aligned In0.4Ga0.6As self-organized quantum dots. This evidence of tunnelin g is observed as a rapid spectral redistribution of electrons within a few hundred femtoseconds of optical excitation. Measurements show that this spe ctral spread is independent of carrier density and, therefore, indicate tha t carrier-carrier scattering is not the main mechanism for carrier redistri bution. Instead, electronic tunneling is responsible for the interdot coupl ing; tunneling rate calculations agree reasonably with the experiment, supp orting this conclusion. (C) 2000 American Institute of Physics. [S0003-6951 (00)04417-X].