Self-organized formation and photoluminescence of Cd1-xMnxTe quantum dots grown on ZnTe by atomic layer epitaxy

Citation
Y. Terai et al., Self-organized formation and photoluminescence of Cd1-xMnxTe quantum dots grown on ZnTe by atomic layer epitaxy, APPL PHYS L, 76(17), 2000, pp. 2400-2402
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
17
Year of publication
2000
Pages
2400 - 2402
Database
ISI
SICI code
0003-6951(20000424)76:17<2400:SFAPOC>2.0.ZU;2-2
Abstract
Self-organized quantum dots (QDs) of Cd1-xMnxTe were grown on the ZnTe(100) surface by atomic layer epitaxy. Atomic force microscope measurement on th e surface of a 3.5-ML-thick Cd1-xMnxTe layer revealed dot formation in a hi gh density of the order of 10(10)-10(11) cm(-2) when the Mn composition x w as less than 10%. The typical dot size was given approximately by 20 nm in diameter and 2 nm in height. In photoluminescence (PL) measurements on the capped QDs, the excitonic emissions from the QDs were observed at 2.16-2.27 eV in the range of Mn composition x=0%-10%. The PL spectra from Cd1-xMnxTe QDs with x=0.6%-10.2% consisted of two lines separated by about 20 meV. Th e dependence of the PL energies on the Mn composition and the Zeeman shift were compared with the calculation. (C) 2000 American Institute of Physics. [S0003-6951(00)04317-5].