Pg. Datskos et al., PHOTOPHYSICAL AND ELECTRON-ATTACHMENT PROPERTIES OF ARF-EXCIMER-LASERIRRADIATED H-2, Physical review. A, 55(6), 1997, pp. 4131-4142
Detailed electron attachment and spectroscopic measurements are report
ed on ArF-excimer-laser irradiated H-2. These studies indicate that pr
eviously reported efficient H- formation in ArF-laser irradiated H-2 i
s due to electron attachment to high-lying Rydberg (HR) states indirec
tly populated by the laser irradiation. Electron attachment studies in
dicate a lifetime of greater than or equal to 40 ns for the electron a
ttaching state(s): The spectroscopic studies show that vacuum ultravio
let emission due to the B (1) Sigma(u)(+) --> X (1) Sigma(g)(+) transi
tions continues for up to similar to 100 ns after the termination of t
he laser pulse and thus that the B state is populated by cascades from
higher-lying states with longer lifetimes. The temporal profile of Ly
man-alpha emission due to the H(n = 2) to H(n = 1) transitions is cons
istent with the production of H(n = 2) states by electron attachment t
o HR states.