Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channelmetal oxide semiconductor with medium-dose fluorine implantation

Effects of fluorine incorporation on ultrathin (4 nm) gate oxide integrity were investigated by fluorine co-implantation into p(+) polysilicon gate. I n contrast to previous reports that fluorine incorporation worsens boron pe netration and degrades oxide reliability, it was observed that with a mediu m F+ dose (similar to 1 x 10(14) cm(-2)), charge-to-breakdown characteristi cs can be improved without noticeable enhancement of boron penetration. It was also observed that fluorinated oxide depicts improved immunity to plasm a damage as is evidenced by suppressed gate leakage current of antenna devi ces after plasma processing. (C) 2000 The Electrochemical Society. S1099-00 62(00)01-101-9. All rights reserved.