1W continuous wave (CW) reliable operation (similar to 1000h) in large tran
sverse spot-size (d/Gamma = 0.55 mu m), compressively strained, InGaAsP (la
mbda = 0.73 mu m)-active region diode lasers is demonstrated. The use of te
nsile-strained InGaP barrier layers provides strain-compensation and result
s in a weak temperature sensitivity for the threshold current (T-0 = 125K)
and external differential quantum efficiency (T-1 = 410K).