1W CW reliable lambda=730nm aluminium-free active layer diode laser

Authors
Rusli, S Al-Muhanna, A Earles, T Mawst, LJ
Citation
S. Rusli et al., 1W CW reliable lambda=730nm aluminium-free active layer diode laser, ELECTR LETT, 36(7), 2000, pp. 630-631
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
7
Year of publication
2000
Pages
630 - 631
Database
ISI
SICI code
0013-5194(20000330)36:7<630:1CRLAA>2.0.ZU;2-C
Abstract
1W continuous wave (CW) reliable operation (similar to 1000h) in large tran sverse spot-size (d/Gamma = 0.55 mu m), compressively strained, InGaAsP (la mbda = 0.73 mu m)-active region diode lasers is demonstrated. The use of te nsile-strained InGaP barrier layers provides strain-compensation and result s in a weak temperature sensitivity for the threshold current (T-0 = 125K) and external differential quantum efficiency (T-1 = 410K).