Citation
Gk. Kuang et al., High-performance InGaAs-InGaAlAs 1.83 mu m lasers, ELECTR LETT, 36(7), 2000, pp. 634-636
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
36
Issue
7
Year of publication
2000
Pages
634 - 636
Database
ISI
SICI code
0013-5194(20000330)36:7<634:HI1MML>2.0.ZU;2-Q
Abstract
1.83 mu m InGaAs-InGaAlAs strained-layer quantum well (QW) lasers have been
fabricated. A CW threshold current density of 290A/cm(2) at 15 degrees C,
a characteristic temperature of 65K and a maximum CW operating temperature
of 94 degrees C have been achieved.