Room temperature low-threshold CW operation of 1.23 mu m GaAsSbVCSELs on GaAs substrates

Authors
Yamada, M Anan, T Kurihara, K Nishi, K Tokutome, K Kamei, A Sugou, S
Citation
M. Yamada et al., Room temperature low-threshold CW operation of 1.23 mu m GaAsSbVCSELs on GaAs substrates, ELECTR LETT, 36(7), 2000, pp. 637-638
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
7
Year of publication
2000
Pages
637 - 638
Database
ISI
SICI code
0013-5194(20000330)36:7<637:RTLCOO>2.0.ZU;2-G
Abstract
Room temperature (RT) continuous-wave (CW) operation of vertical-cavity sur face-emitting lasers (VCSELs) with GaAsSb quantum wells on GaAs substrates has been demonstrated. A 6 x 6 mu m(2) oxide-confined device exhibited RT-C W lasing with a threshold current of 0.7mA at 1.23 mu m, which is the longe st reported wavelength of GaAs-based VCSELs yet reported.