Citation
M. Nakamura et al., Very low threshold current density operation of 1.5 mu m DFB lasers with wire-like active regions, ELECTR LETT, 36(7), 2000, pp. 639-640
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
36
Issue
7
Year of publication
2000
Pages
639 - 640
Database
ISI
SICI code
0013-5194(20000330)36:7<639:VLTCDO>2.0.ZU;2-0
Abstract
Very low threshold 1.5 mu m-wavelength GaInAsP/InP distributed feedback las
ers consisting of deeply etched double quantum-well wire-like active region
s have been successfully realised by CH4/H-2 reactive ion etching and metal
organic vapour phase epitaxial regrowth. A threshold current density J(th)
of as low as 94A/cm(2) was achieved for an active region width of 115nm an
d cavity length of 600 mu m.