Accumulation and depletion in InAs epilayers

Authors
Affentauschegg, C Wieder, HH
Citation
C. Affentauschegg et Hh. Wieder, Accumulation and depletion in InAs epilayers, ELECTR LETT, 36(7), 2000, pp. 672-673
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
7
Year of publication
2000
Pages
672 - 673
Database
ISI
SICI code
0013-5194(20000330)36:7<672:AADIIE>2.0.ZU;2-Z
Abstract
Thin heteroepitaxial layers of In0.8Al0.2As grown on InAs surfaces by molec ular beam epitaxy can reduce the density of surface states which pin the Fe rmi level and cause surface accumulation. Biased capacitance-voltage and ga ted Hall measurements indicate that InAs surfaces can be driven through the flat-band into depletion with the density of surface states. reduced to si milar to 1.5 x 10(12)cm(-2) eV(-1) below the Fermi level.