High-frequency noise performance of SiGe p-channel MODFETs

For the first time, an investigation into the microwave noise performance o f SiGe-based MODFETs is presented. The devices were 0.1 mu m gate-length p- channeI MODFETs fabricated on a high-mobility SiGe strained-layer heterostr ucture grown by UHV-CVD and had a unity gain cutoff frequency f(T) of 42GHz and maximum frequency of oscillation of f(max) 69GHz at a drain-to-source bias voltage V-ds of -0.6V. A minimum noise figure F-min of 1.1dB and an as sociated gain G(a) of 18dB were obtained at 3GHz, while values of F-min = 1 .7dB and G(a) = 12dB were obtained at 10GHz. These values are comparable to those of SiGe production HBTs, and demonstrate the suitability of SiGe MOD FETs for RF and microwave communications applications.