Citation
M. Alexe et al., Low temperature GaAs/Si direct wafer bonding, ELECTR LETT, 36(7), 2000, pp. 677-678
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
36
Issue
7
Year of publication
2000
Pages
677 - 678
Database
ISI
SICI code
0013-5194(20000330)36:7<677:LTGDWB>2.0.ZU;2-6
Abstract
GaAs-Si low temperature bonding fas been achieved using spin-on-glass as th
e intermediate layer. Interface energies of similar to 1.7J/m(2) were obtai
ned after thermal annealing at only 200 degrees C. The interface energy is
sufficiently high to allow thinning of the GaAs wafer down to 5-10 mu m.