High-power GaN MESFET on sapphire substrate

Authors
Gaquiere, C Trassaert, S Boudart, B Crosnier, Y
Citation
C. Gaquiere et al., High-power GaN MESFET on sapphire substrate, IEEE MICR G, 10(1), 2000, pp. 19-20
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
10
Issue
1
Year of publication
2000
Pages
19 - 20
Database
ISI
SICI code
1051-8207(200001)10:1<19:HGMOSS>2.0.ZU;2-B
Abstract
The first power results of GaN MESFET achieved at 2 GHz are presented. A po wer density of 2.2 W/mm has been obtained with an associated power-added ef ficiency of 27% at V-ds = 30 V and v(gs) = -2 V. These results represent a significant improvement over similar MESFET's or HFET's grown on GaAs or In P substrates.