Island growth of Ge on Si(001) and CoSi2 on Si(111) studied with UHV electron microscopy

Authors
Ross, FM Tersoff, J Tromp, RM Reuter, MC Bennett, PA
Citation
Fm. Ross et al., Island growth of Ge on Si(001) and CoSi2 on Si(111) studied with UHV electron microscopy, J ELEC MICR, 48, 1999, pp. 1059-1066
Citations number
52
Categorie Soggetti
Multidisciplinary
Journal title
JOURNAL OF ELECTRON MICROSCOPY
ISSN journal
00220744 → ACNP
Volume
48
Year of publication
1999
Supplement
S
Pages
1059 - 1066
Database
ISI
SICI code
0022-0744(1999)48:<1059:IGOGOS>2.0.ZU;2-8
Abstract
We have observed and compared the growth of nanosize, self-assembled island s in two strained heteroepitaxial systems, Ge on Si(001) and CoSi2 on Si(11 1). Island growth took place in a transmission electron microscope and in a low-energy electron microscope, both of which had been modified to allow i n situ deposition. The kinetics of island formation are substantially diffe rent in the two systems, suggesting different growth mechanisms. We discuss the two mechanisms and their implications for controlled island growth for novel electronic devices.