The effect of electron-phonon interaction in iron-doped III-V cubic semiconductors

Citation
D. Colignon et al., The effect of electron-phonon interaction in iron-doped III-V cubic semiconductors, J PHYS-COND, 12(12), 2000, pp. 2691-2699
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
12
Issue
12
Year of publication
2000
Pages
2691 - 2699
Database
ISI
SICI code
0953-8984(20000327)12:12<2691:TEOEII>2.0.ZU;2-#
Abstract
A theoretical study of optical absorption and emission measurements of Fe2 as a substitutional impurity in InP and Cap is presented. A new interpreta tion of the low-temperature absorption spectrum is proposed based on a weak Jahn-Teller interaction between the electronic excited states and a local gap mode of Gamma(5) symmetry. The model also includes the crystal potentia l, hybridization with the orbitals of the ligands of the host crystal, spin -orbit interaction and a weak dynamic Jahn-Teller coupling of the orbital g round state of Fe2+ with transverse acoustic phonons of Gamma(3) symmetry. The theoretical model describes with good accuracy the measured positions a nd relative intensities of the spectral lines. In addition, the mass depend ence of the local gap mode of Gamma(5) symmetry reproduces the general feat ures of the fine structures associated with the isotopic shifts of the zero -phonon line and the contribution to the isotopic shifts arising from the d ifference in zero-point energy between the initial and final states of the transition is evaluated.