Transparent conductive ZnO thin films prepared by plasma enhanced CVD - Effect of boron dopant

Authors
Kondo, K Ishiyama, K Tanaka, Z
Citation
K. Kondo et al., Transparent conductive ZnO thin films prepared by plasma enhanced CVD - Effect of boron dopant, KAG KOG RON, 26(2), 2000, pp. 309-311
Citations number
9
Categorie Soggetti
Chemical Engineering
Journal title
KAGAKU KOGAKU RONBUNSHU
ISSN journal
0386216X → ACNP
Volume
26
Issue
2
Year of publication
2000
Pages
309 - 311
Database
ISI
SICI code
0386-216X(200003)26:2<309:TCZTFP>2.0.ZU;2-S
Abstract
Zinc oxide is a promising material for the transparent electrodes and color development lasers in the ultra violet region. This zinc oxide film is pre pared from DEZ and N2O with Plasma CVD. The safe dopant of TEB is used. The minimum resistance is found to be 4.55 x 10(-3) Ohm.cm at substrate temper ature of 300 degrees C. This minimum resistance corresponds to an increase in electron density and the film shows high c-axis orientation.