In situ mass spectrometry study on, surface reactions in atomic layer deposition of Al2O3 thin films from trimethylaluminum and water

Citation
M. Juppo et al., In situ mass spectrometry study on, surface reactions in atomic layer deposition of Al2O3 thin films from trimethylaluminum and water, LANGMUIR, 16(8), 2000, pp. 4034-4039
Citations number
37
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
LANGMUIR
ISSN journal
07437463 → ACNP
Volume
16
Issue
8
Year of publication
2000
Pages
4034 - 4039
Database
ISI
SICI code
0743-7463(20000418)16:8<4034:ISMSSO>2.0.ZU;2-H
Abstract
The surface reactions between trimethylaluminum (TMA) and deuterated water (D2O) in the deposition of Al2O3 were studied by using a mass spectrometer to determine the amount of the reaction product, methane (CH3D), produced i n a flow-type atomic layer deposition (ALD) reactor during each deposition step. At low temperatures (<200 degrees C) more CH3D was produced during th e TMA pulse whereas at;higher temperatures when the dehydroxylation is more extensive more CH3D was produced during the D2O pulse. Iri addition to the temperature, the hydroxyl coverage was also noticed to depend on the D2O d ose, since D2O reacts with dehydroxylated alumina sites producing adsorbed -OD groups. According ed our results, which agree quite well with previous studies carried out by other methods, the dehydroxylation of the alumina su rface seems to play a key role in the surface chemistry of the atomic layer deposition of Al2O3.