On the far- and near-field optical microscopy of microelectronics structures using second-harmonic and sum-frequency generation

Nonlinear-optical wave-mixing processes, such as second-harmonic and sum-fr equency generation, are shown to allow the implementation of high-resolutio n schemes of far- and near-field optical microscopy on technological microe lectronics structures. A combination of far- and near-field microscopy with dc-field-induced nonlinear-optical processes is suggested as a means for h igh-resolution time-resolved imaging of spatial distributions of electric f ields in silicon microelectronics structures.