Matching network for microwave applications of semiconductor laser diodes (LDS): Consideration of the effects of electrical parasitics and LD carrier-dependent impedance

Citation
H. Ghafouri-shiraz et Wm. Wong, Matching network for microwave applications of semiconductor laser diodes (LDS): Consideration of the effects of electrical parasitics and LD carrier-dependent impedance, MICROW OPT, 25(3), 2000, pp. 197-200
Citations number
10
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
25
Issue
3
Year of publication
2000
Pages
197 - 200
Database
ISI
SICI code
0895-2477(20000505)25:3<197:MNFMAO>2.0.ZU;2-E
Abstract
A complete semiconductor laser transmitter model consisting of a matching c ircuit, an electrical parasitic circuit, and a nonlinear intrinsic laser is introduced. The model is based on the transmission-line laser modeling met hod, which is very efficient and flexible. The effect of electrical parasit ics on the modulation response of the laser and the associated improvements owing to matching are also reported It has been found that the dependency of laser impedance on the carrier density is negligible. (C) 2000 John Wile y & Sons, Inc.