HIGH-CARRIER-DENSITY ELECTRON DYNAMICS IN LOW-TEMPERATURE-GROWN GAAS

Authors
SOSNOWSKI TS NORRIS TB WANG HH GRENIER P WHITAKER JF SUNG CY
Citation
Ts. Sosnowski et al., HIGH-CARRIER-DENSITY ELECTRON DYNAMICS IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 70(24), 1997, pp. 3245-3247
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
24
Year of publication
1997
Pages
3245 - 3247
Database
ISI
SICI code
0003-6951(1997)70:24<3245:HEDILG>2.0.ZU;2-S
Abstract
Pump-probe differential transmission measurements examine high-carrier -density phenomena in as-grown and annealed GaAs samples grown at temp eratures from 210 to 270 degrees C. We observe trap saturation and Aug er recombination, and accurately model the measurements on annealed sa mples with a simple two level rate equation, allowing us to extract th e trapped-electron lifetimes. (C) 1997 American Institute of Physics.