TYPE-II RECOMBINATION AND BAND-OFFSET DETERMINATION IN A TENSILE-STRAINED INGAAS QUANTUM-WELL

Authors
LUGAND C BENYATTOU T GUILLOT G VENET T GENDRY M HOLLINGER G SERMAGE B
Citation
C. Lugand et al., TYPE-II RECOMBINATION AND BAND-OFFSET DETERMINATION IN A TENSILE-STRAINED INGAAS QUANTUM-WELL, Applied physics letters, 70(24), 1997, pp. 3257-3259
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
24
Year of publication
1997
Pages
3257 - 3259
Database
ISI
SICI code
0003-6951(1997)70:24<3257:TRABDI>2.0.ZU;2-Z
Abstract
Photoluminescence measurements under different excitation powers and t ime-resolved photoluminescence experiments were carried out at low tem perature on tensile strained In0.3Ga0.7As quantum wells with InGaAs ba rriers lattice matched to InP. Evidence of a type II recombination is found between carriers confined in the tensile strained layer and in t he lattice matched one. This study allows us to propose a precise dete rmination of the light holes band offset in the In0.3Ga0.7As/In0.53Ga0 .47As system. (C) 1997 American Institute of Physics.