SELF-ORGANIZED CDSE QUANTUM DOTS ONTO CLEAVED GAAS(110) ORIGINATING FROM STRANSKI-KRASTANOW GROWTH MODE

Self-organized CdSe/ZnSe quantum dots (QDs) have been fabricated on Ga As (110) crystal surfaces, which were obtained by cleaving GaAs (100) wafers in ultrahigh vacuum. CdSe showed a conventional Stranski-Krasta now growth mode on the ZnSe (110) lower cladding layer, whose surfaces are atomically flat. The wetting layers, which are compose of quantum wells with well widths of 1, 2, and 3 monomolecular layers, showed sh arp photoluminescence (PL). The fabricated CdSe QDs showed intense gre en PL, spectra, whose peak is located at 2.192 eV, with a linewidth of 0.24 eV. The state filling effect in CdSe QDs was also observed by em ploying excitation power dependence of the PL intensity. (C) 1997 Amer ican Institute of Physics.