A modification of close-space vapor transport combined with free evaporation technique for doping semiconductor films and production of interfaces

In this work a new method of double process close-space vapor transport tec hnique (DCSVT) is presented. This new process can be divided in two steps: In the first step a graphite source, with CdTe powder as the CdTe source is used together with an other graphite block with or without Coming glass sl ide as substrate. In the second step the film deposited in the first step o ver the graphite block or Coming glass is used as packet CdTe source. Diffe rent substrates are used to obtain non-doped polycrystalline CdTe films. Me tallic indium is used as impurity to obtain doped films. We describe the st ructural and morphological characteristics and properties of the films depo sited using this new process.