Optical properties of CdS layers grown by MOVPE on (211)B and (100) GaAs

Authors
Sallet, V Lusson, A Tromson-Carli, A Riviere, A Riviere, JP Rommeluere, JF Marfaing, Y
Citation
V. Sallet et al., Optical properties of CdS layers grown by MOVPE on (211)B and (100) GaAs, SEMIC SCI T, 15(4), 2000, pp. 408-412
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
15
Issue
4
Year of publication
2000
Pages
408 - 412
Database
ISI
SICI code
0268-1242(200004)15:4<408:OPOCLG>2.0.ZU;2-3
Abstract
CdS layers were grown by MOVPE on (100) GaAs and (211)B GaAs substrates. Th e last substrate orientation yields homogeneous wurtzite CdS layers with sh arply defined free excitonic structures seen in optical reflectivity and ph otoluminescence. Free exciton luminescence dominates the spectrum at T > 50 K. Structural studies indicate that the layers grown on (100) GaAs substra tes are a mixture of hexagonal and cubic CdS phases spatially arranged in a quasi-periodic fashion. The luminescence spectrum reflects this situation.